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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 80V 9.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel   - 80V 9.3A (Tc) 15 mOhm @ 5.6A, 10V 4V @ 250µA 53nC @ 10V 1510pF @ 25V 10V ±20V 2.5W (Tc)
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Infineon Technologies MOSFET N-CH 30V 14A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel   - 30V 14A (Ta) 8 mOhm @ 14A, 16V 4V @ 250µA 59nC @ 10V 2410pF @ 15V 10V, 16V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 100V 5.4A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel   - 100V 5.4A (Ta) 39 mOhm @ 3.2A, 10V 4V @ 250µA 56nC @ 10V 1720pF @ 25V 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET 2N-CH 80V 3.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube   Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 2 N-Channel (Dual) 2W Logic Level Gate 80V 3.6A 73 mOhm @ 2.2A, 10V 4V @ 250µA 23nC @ 10V 660pF @ 25V      
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