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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$15.290
VIEW
RFQ
STMicroelectronics N-CHANNEL 900 V, 0.110 OHM TYP., TO-247-3 MDmesh™ K5 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 Long Leads 0 1 N-Channel - 900V 40A (Tc) 99 mOhm @ 20A, 10V 5V @ 100µA 89nC @ 10V 3260pF @ 100V 10V ±30V 446W (Tc)
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Per Unit
$14.510
VIEW
RFQ
STMicroelectronics N-CHANNEL 900 V, 0.110 OHM TYP., TO-247-3 MDmesh™ K5 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 900V 40A (Tc) 99 mOhm @ 20A, 10V 5V @ 100µA 89nC @ 10V 3260pF @ 100V 10V ±30V 446W (Tc)
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Per Unit
$14.520
VIEW
RFQ
STMicroelectronics MOSFET N-CH 800V 46A TO-247-3 MDmesh™ K5 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 800V 46A (Tc) 80 mOhm @ 23A, 10V 5V @ 100µA 92nC @ 10V 3230pF @ 100V 10V ±30V 446W (Tc)
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Per Unit
$17.480
RFQ
189
In-stock
STMicroelectronics MOSFET N-CH 1500V 14A TO-247 TO-247-3 MDmesh™ K5 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 1500V 14A (Tc) 900 mOhm @ 7A, 10V 5V @ 100µA 89nC @ 10V 3145pF @ 100V 10V ±30V 446W (Tc)
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