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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 30V 22A DIRECTFET DirectFET™ Isometric MX HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MX 0 1000 P-Channel - 30V 22A (Ta), 160A (Tc) 2.9 mOhm @ 22A, 10V 2.4V @ 150µA 130nC @ 10V 7305pF @ 15V 4.5V, 10V ±20V 2.1W (Ta), 113W (Tc)
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Per Unit
$1.729
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Infineon Technologies MOSFET N-CH 40V 195A TO-263-3, D²Pak (2 Leads + Tab), TO-263AB StrongIRFET™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 25600 N-Channel - 40V 195A (Tc) 1.9 mOhm @ 100A, 10V 2.4V @ 150µA 137nC @ 4.5V 8320pF @ 25V 4.5V, 10V ±20V 231W (Tc)
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Per Unit
$1.101
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Infineon Technologies MOSFET P-CH 30V 22A DIRECTFET DirectFET™ Isometric MX HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active DIRECTFET™ MX 0 4800 P-Channel - 30V 22A (Ta), 160A (Tc) 2.9 mOhm @ 22A, 10V 2.4V @ 150µA 130nC @ 10V 7305pF @ 15V 4.5V, 10V ±20V 2.1W (Ta), 113W (Tc)
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Per Unit
$3.360
RFQ
2,537
In-stock
Infineon Technologies MOSFET N-CH 40V 195A TO-220-3 HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 40V 195A (Tc) 1.9 mOhm @ 100A, 10V 2.4V @ 150µA 137nC @ 4.5V 8320pF @ 25V 4.5V, 10V ±20V 231W (Tc)
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