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Drain to Source Voltage (Vdss) :
12 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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onsemi MOSFET N/P-CH 30V 8A/6A 8SOP 8-SOIC (0.173", 4.40mm Width) - Tape & Reel (TR) Surface Mount 150°C (TJ) Obsolete 8-SOP 0 1000 N and P-Channel 2.5W Logic Level Gate 30V 8A, 6A 24 mOhm @ 8A, 10V - 12nC @ 10V 690pF @ 10V
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Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 2 P-Channel (Dual) 2W Logic Level Gate 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V
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Infineon Technologies MOSFET N/P-CH 30V 2.7A/2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 4000 N and P-Channel 1.25W Logic Level Gate 30V 2.7A, 2A 110 mOhm @ 1.4A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V
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Infineon Technologies MOSFET 2N-CH 30V 2.4A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Cut Tape (CT) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 1 2 N-Channel (Dual) 1.25W Logic Level Gate 30V 2.4A 135 mOhm @ 1.7A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V
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Infineon Technologies MOSFET 2P-CH 30V 2.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 2 P-Channel (Dual) 2W Logic Level Gate 30V 2.3A 250 mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V
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onsemi MOSFET 2N-CH 60V 2.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount - Obsolete 8-SOIC 0 2500 2 N-Channel (Dual) 900mW Logic Level Gate 60V 2.6A 160 mOhm @ 2.6A, 10V 3V @ 250µA 12nC @ 10V 200pF @ 30V
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Per Unit
$0.157
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RFQ
Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN 6-UDFN Exposed Pad - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type B) 0 10000 2 N-Channel (Dual) 730mW Logic Level Gate 20V 3.3A 45 mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V 389pF @ 10V
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Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN 6-UDFN Exposed Pad - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type B) 0 3000 2 N-Channel (Dual) 730mW Logic Level Gate 20V 3.3A 45 mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V 389pF @ 10V
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Per Unit
$0.554
RFQ
6,000
In-stock
onsemi MOSFET 2N-CH 30V 5.5A/6.3A WDFN8 8-PowerWDFN - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-WDFN (3x3) 0 3000 2 N-Channel (Dual) 800mW, 810mW Logic Level Gate 30V 5.5A, 6.3A 17.4 mOhm @ 9A, 10V 2.2V @ 250µA 12nC @ 10V 605pF @ 15V
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Per Unit
$0.547
RFQ
5,000
In-stock
Infineon Technologies MOSFET 2N-CH 8TDSON 8-PowerVDFN Automotive, AEC-Q101, OptiMOS™ Tape & Reel (TR) Surface Mount -55°C ~ 175°C (TJ) Active PG-TDSON-8-10 0 5000 2 N-Channel (Dual) 43W Logic Level Gate 55V 20A 65 mOhm @ 15A, 10V 2V @ 14µA 12nC @ 10V 410pF @ 25V
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Per Unit
$0.237
RFQ
8,000
In-stock
Infineon Technologies MOSFET 2N-CH 30V 2.4A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active Micro8™ 0 4000 2 N-Channel (Dual) 1.25W Logic Level Gate 30V 2.4A 135 mOhm @ 1.7A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V
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Per Unit
$0.279
RFQ
52,000
In-stock
Infineon Technologies MOSFET N/P-CH 30V 2.7A/2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active Micro8™ 0 4000 N and P-Channel 1.25W Logic Level Gate 30V 2.7A, 2A 110 mOhm @ 1.7A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V
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