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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 20V 5.8A 2X2 PQFN 6-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-PQFN (2x2) 0 1 P-Channel   - 20V 7.2A (Ta), 15A (Tc) 31 mOhm @ 8.5A, 4.5V 1.1V @ 10µA 12nC @ 10V 877pF @ 10V 2.5V, 4.5V ±12V 2.1W (Ta), 9.6W (Tc)
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$0.234
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Infineon Technologies MOSFET P-CH 20V 15A 2X2 PQFN 6-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-PQFN (2x2) 0 4000 P-Channel   - 20V 7.2A (Ta), 15A (Tc) 31 mOhm @ 8.5A, 4.5V 1.1V @ 10µA 12nC @ 10V 877pF @ 10V 2.5V, 4.5V ±12V 2.1W (Ta), 9.6W (Tc)
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Per Unit
$0.157
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Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN 6-UDFN Exposed Pad - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type B) 0 10000 2 N-Channel (Dual) 730mW Logic Level Gate 20V 3.3A 45 mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V 389pF @ 10V      
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Diodes Incorporated MOSFET 2N-CH 20V 3.3A 6UDFN 6-UDFN Exposed Pad - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type B) 0 3000 2 N-Channel (Dual) 730mW Logic Level Gate 20V 3.3A 45 mOhm @ 5A, 4.5V 1V @ 250µA 12nC @ 10V 389pF @ 10V      
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