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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.343
VIEW
RFQ
STMicroelectronics MOSFET N CH 600V 2A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 SuperMESH3™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active DPAK 0 2500 N-Channel - 600V 2A (Tc) 4.5 Ohm @ 1A, 10V 4.5V @ 50µA 12nC @ 10V 235pF @ 50V 10V ±30V 45W (Tc)
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Per Unit
$0.657
RFQ
2,500
In-stock
Infineon Technologies MOSFET N-CH 600V 7.3A TO252 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ P6 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 600V 7.3A (Tc) 600 mOhm @ 2.4A, 10V 4.5V @ 200µA 12nC @ 10V 557pF @ 100V 10V ±20V 63W (Tc)
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