- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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265
In-stock
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Infineon Technologies | MOSFET N-CH 150V 21A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | 0 | 1 | N-Channel | - | 150V | 21A (Tc) | 53 mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | 887pF @ 75V | 8V, 10V | ±20V | 68W (Tc) | |||
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1,606
In-stock
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STMicroelectronics | MOSFET N-CH 800V 5A TO-220 | TO-220-3 | MDmesh™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 800V | 5A (Tc) | 1.15 Ohm @ 2.5A, 10V | 5V @ 100µA | 12nC @ 10V | 270pF @ 100V | 10V | ±30V | 85W (Tc) |
