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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.434
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STMicroelectronics MOSFET N-CH 60V 12A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 STripFET™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DPAK 0 2500 N-Channel   - 60V 12A (Tc) 100 mOhm @ 6A, 10V 4V @ 250µA 12nC @ 10V 315pF @ 25V 10V ±20V 30W (Tc)
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Per Unit
$0.433
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STMicroelectronics MOSFET N-CHANNEL 60V 24A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount - Active DPAK 0 2500 N-Channel   - 60V 24A (Tc) - - 12nC @ 10V - 5V, 10V - 60W (Tc)
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onsemi MOSFET 2N-CH 60V 2.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount - Obsolete 8-SOIC 0 2500 2 N-Channel (Dual) 900mW Logic Level Gate 60V 2.6A 160 mOhm @ 2.6A, 10V 3V @ 250µA 12nC @ 10V 200pF @ 30V      
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