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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | N-CHANNEL 500 V, 0.299 OHM TYP., | TO-220-3 Full Pack | MDmesh™ DM2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 500V | 11A (Tc) | 350 mOhm @ 5.5A, 10V | 5V @ 250µA | 16nC @ 10V | 628pF @ 100V | 10V | ±25V | 25W (Tc) | |||
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VIEW | STMicroelectronics | N-CHANNEL 500 V, 0.35 OHM TYP., | TO-252-3, DPak (2 Leads + Tab), SC-63 | MDmesh™ DM2 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 500V | 11A (Tc) | 350 mOhm @ 5.5A, 10V | 5V @ 250µA | 16nC @ 10V | 628pF @ 100V | 10V | ±25V | 110W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CHANNEL 600V 9A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | MDmesh™ M2 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 600V | 9A (Tc) | 450 mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | 538pF @ 100V | 10V | ±25V | 85W (Tc) | |||
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762
In-stock
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STMicroelectronics | MOSFET N-CH 600V 9A TO-220FP | TO-220-3 Full Pack | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 600V | 9A (Tc) | 450 mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | 538pF @ 100V | 10V | ±25V | 25W (Tc) | |||
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1,487
In-stock
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STMicroelectronics | MOSFET N-CH 600V 9A I2PAK-FP | TO-262-3 Full Pack, I²Pak | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAKFP (TO-281) | 0 | 1 | N-Channel | - | 600V | 9A (Tc) | 450 mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | 538pF @ 100V | 10V | ±25V | 25W (Tc) | |||
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2,500
In-stock
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onsemi | MOSFET P-CH 150V | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | 0 | 2500 | P-Channel | - | 150V | 2.2A (Ta) | 255 mOhm @ 2.2A, 10V | 4V @ 250µA | 16nC @ 10V | 1130pF @ 75V | 6V, 10V | ±25V | 1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 11A 8PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (3.3x3.3), Power33 | 0 | 4000 | P-Channel | - | 30V | 11A (Ta) | 14.6 mOhm @ 11A, 10V | 2.4V @ 25µA | 16nC @ 10V | 1543pF @ 25V | 4.5V, 10V | ±25V | 2.6W (Ta) |
