- Packaging :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V DIRECTFET-SJ | DirectFET™ Isometric SJ | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ SJ | 0 | 4800 | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | 3W (Ta), 42W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | DirectFET™ Isometric SJ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ SJ | 0 | 1000 | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | 2.2W (Ta), 42W (Tc) | |||
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3,500
In-stock
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Infineon Technologies | MOSFET N-CH TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | - | 650V | 6A (Tc) | 660 mOhm @ 3.22A, 10V | 4.5V @ 214.55µA | 20nC @ 10V | 543pF @ 100V | 10V | ±20V | 62.5W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 10A 4VSON | 4-PowerTSFN | CoolMOS™ C7 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-VSON-4 | 0 | 3000 | N-Channel | - | 650V | 10A (Tc) | 230 mOhm @ 2.4A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | 67W (Tc) | |||
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24,000
In-stock
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Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | DirectFET™ Isometric SJ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ SJ | 0 | 4800 | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | 2.2W (Ta), 42W (Tc) |
