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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$9.490
VIEW
RFQ
Infineon Technologies MOSFET N-CH 650V 31A TO-247 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO247-3 0 1 N-Channel - 650V 31A (Tc) 99 mOhm @ 18A, 10V 3.5V @ 1.2mA 80nC @ 10V 2800pF @ 100V 10V ±20V 255W (Tc)
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Per Unit
$8.680
VIEW
RFQ
Infineon Technologies MOSFET N-CH 650V 31A TO-220 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO-220-3 0 1 N-Channel - 650V 31A (Tc) 99 mOhm @ 18A, 10V 3.5V @ 1.2mA 80nC @ 10V 2800pF @ 100V 10V ±20V 255W (Tc)
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Per Unit
$1.720
RFQ
940
In-stock
Infineon Technologies MOSFET N-CH 55V 80A TO220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO220-3-1 0 1 N-Channel - 55V 80A (Tc) 9.1 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 2360pF @ 25V 10V ±20V 190W (Tc)
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Per Unit
$9.530
RFQ
1,203
In-stock
STMicroelectronics MOSFET N-CH 600V 21A TO-247 FDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-247-3 0 1 N-Channel - 600V 21A (Tc) 160 mOhm @ 10.5A, 10V 5V @ 250µA 80nC @ 10V 2400pF @ 50V 10V ±25V 160W (Tc)
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Per Unit
$8.250
RFQ
133
In-stock
STMicroelectronics MOSFET N-CH 600V 29A TO-220 MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-220-3 0 1 N-Channel - 600V 29A (Tc) 105 mOhm @ 14.5A, 10V 4V @ 250µA 80nC @ 10V 2722pF @ 100V 10V ±25V 250W (Tc)
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