- Rds On (Max) @ Id, Vgs :
- Power Dissipation (Max) :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 525 | P-Channel | - | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 150V 13A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 700 | P-Channel | - | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 3.8W (Ta), 110W (Tc) | ||||
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4,950
In-stock
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Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | P-Channel | - | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) |
