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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.200
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RFQ
Infineon Technologies MOSFET P-CH 150V 13A TO220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1000 P-Channel - 150V 13A (Tc) 290 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V 110W (Tc)
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Per Unit
$1.720
RFQ
3,846
In-stock
Infineon Technologies MOSFET N-CH 60V 60A TO-220-3 StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 60V 60A (Tc) 9 mOhm @ 36A, 10V 3.7V @ 50µA 66nC @ 10V 2230pF @ 25V 6V, 10V ±20V 83W (Tc)
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Per Unit
$1.610
RFQ
1,288
In-stock
Infineon Technologies MOSFET P-CH 150V 13A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 P-Channel - 150V 13A (Tc) 290 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V 110W (Tc)
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