- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET N-CH 100V 80A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DeepGATE™, STripFET™ VII | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 100V | 80A (Tc) | 8 mOhm @ 40A, 10V | 4.5V @ 250µA | 61nC @ 10V | 4369pF @ 50V | 10V | ±20V | 150W (Tc) | |||
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VIEW | Infineon Technologies | MV POWER MOS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™-5 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 150V | 114A (Tc) | 7.3 mOhm @ 57A, 10V | 4.6V @ 160µA | 61nC @ 10V | 4700pF @ 75V | 8V, 10V | ±20V | 214W (Tc) | |||
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8,800
In-stock
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onsemi | MOSFET N-CH 250V 44A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | UniFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK | 0 | 800 | N-Channel | - | 250V | 44A (Tc) | 69 mOhm @ 22A, 10V | 5V @ 250µA | 61nC @ 10V | 2870pF @ 25V | 10V | ±30V | 307W (Tc) |
