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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
IRFP4668
Per Unit
$5.990
RFQ
20,558
In-stock
Infineon Technologies MOSFET N-CH 200V 130A TO-247AC TO-247-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 1 N-Channel - 200V 130A (Tc) 9.7 mOhm @ 81A, 10V 5V @ 250µA 241nC @ 10V 10720pF @ 50V 10V ±30V 520W (Tc)
FDMS6681Z
GET PRICE
RFQ
24,000
In-stock
onsemi MOSFET P-CH 30V 21.1A POWER56 8-PowerTDFN PowerTrench® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 3000 P-Channel - 30V 21.1A (Ta), 49A (Tc) 3.2 mOhm @ 22.1A, 10V 3V @ 250µA 241nC @ 10V 10380pF @ 15V 4.5V, 10V ±25V 2.5W (Ta), 73W (Tc)
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