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11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | 1W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 80 | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 18.5A 6PQFN | 6-VDFN Exposed Pad | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | N-Channel | - | 60V | 18.5A (Tc) | 17 mOhm @ 11A, 10V | 2.3V @ 10µA | 8nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | 11.5W (Tc) | ||||
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VIEW | onsemi | MOSFET P-CH 500V 2.7A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | - | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | 85W (Tc) | ||||
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2,149
In-stock
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STMicroelectronics | MOSFET N-CH 60V 30A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 30A (Tc) | 40 mOhm @ 15A, 10V | 2.5V @ 250µA | 17nC @ 5V | 660pF @ 25V | 5V, 10V | ±18V | 70W (Tc) | ||||
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5,000
In-stock
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onsemi | MOSFET P-CH 500V 2.1A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2500 | P-Channel | - | 500V | 2.1A (Tc) | 4.9 Ohm @ 1.05A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | 2.5W (Ta), 50W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 80V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 80V | 3.6A | 73 mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | 660pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 80V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 80V | 3.6A | 73 mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | 660pF @ 25V | ||||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 80V 3.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 80V | 3.6A | 73 mOhm @ 2.2A, 10V | 4V @ 250µA | 23nC @ 10V | 660pF @ 25V |
