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18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 11.5A TO-220AB | TO-220-3 | TEMPFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | P-TO220AB | 0 | 500 | N-Channel | - | 60V | 11.5A (Tc) | 170 mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | 560pF @ 25V | 4.5V | ±10V | 40W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 11.5A TO-220AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TEMPFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | TO-220AB | 0 | 1000 | N-Channel | - | 60V | 11.5A (Tc) | 170 mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | 560pF @ 25V | 4.5V | ±10V | 40W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 11.5A TO-220AB | TO-220-3 | TEMPFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | P-TO220AB | 0 | 500 | N-Channel | - | 60V | 11.5A (Tc) | 170 mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | 560pF @ 25V | 4.5V | ±10V | 40W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 3000 | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | 86W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | 86W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | 86W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 2000 | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | 86W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 9.4A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 75 | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | 86W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 3000 | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | 86W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 10A 8PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (3.3x3.3), Power33 | 0 | 4000 | N-Channel | - | 30V | 10A (Ta) | 16 mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | 2.6W (Ta), 20W (Tc) | ||||
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2,000
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | 86W (Tc) | ||||
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3,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | SOT-23-6 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-TSOP | 0 | 3000 | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | ||||
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VIEW | onsemi | MOSFET 2N-CH 60V 5.3A DFN8 | 8-PowerTDFN | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | 0 | 1500 | 2 N-Channel (Dual) | 2.9W | Logic Level Gate | 60V | 5.3A | 44 mOhm @ 15A, 10V | 2.5V @ 250µA | 20nC @ 10V | 560pF @ 25V | |||||||
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VIEW | onsemi | MOSFET 2N-CH 60V 5.3A DFN8 | 8-PowerTDFN | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | 0 | 1500 | 2 N-Channel (Dual) | 2.9W | Logic Level Gate | 60V | 5.3A | 44 mOhm @ 15A, 10V | 2.5V @ 250µA | 20nC @ 10V | 560pF @ 25V | |||||||
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VIEW | onsemi | MOSFET 2N-CH 60V 5.3A DFN8 | 8-PowerTDFN | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | 0 | 5000 | 2 N-Channel (Dual) | 2.9W | Logic Level Gate | 60V | 5.3A | 44 mOhm @ 15A, 10V | 2.5V @ 250µA | 20nC @ 10V | 560pF @ 25V | |||||||
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VIEW | onsemi | MOSFET 2N-CH 60V 5.3A DFN8 | 8-PowerTDFN | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | 0 | 5000 | 2 N-Channel (Dual) | 2.9W | Logic Level Gate | 60V | 5.3A | 44 mOhm @ 15A, 10V | 2.5V @ 250µA | 20nC @ 10V | 560pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 8TDSON | 8-PowerVDFN | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TDSON-8-10 | 0 | 5000 | 2 N-Channel (Dual) | 51W | Logic Level Gate | 55V | 20A | 50 mOhm @ 15A, 10V | 2V @ 19µA | 17nC @ 10V | 560pF @ 25V | |||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 55V 20A TDSON-8-4 | 8-PowerVDFN | OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TDSON-8-4 | 0 | 5000 | 2 N-Channel (Dual) | 51W | Logic Level Gate | 55V | 20A | 50 mOhm @ 15A, 10V | 2V @ 19µA | 17nC @ 10V | 560pF @ 25V |
