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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 300 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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VIEW
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Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 2000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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Per Unit
$0.614
VIEW
RFQ
Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 3000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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STMicroelectronics MOSFET N-CH 30V 30A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 STripFET™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -65°C ~ 175°C (TJ) Obsolete DPAK 0 2500 N-Channel - 30V 30A (Tc) 25 mOhm @ 15A, 10V 2.5V @ 250µA 18nC @ 5V 830pF @ 25V 4.5V, 10V ±20V 50W (Tc)
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Per Unit
$1.390
RFQ
5,875
In-stock
Infineon Technologies MOSFET N-CH 200V 13A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active IPAK (TO-251) 0 1 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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Per Unit
$0.689
RFQ
14,000
In-stock
Infineon Technologies MOSFET N-CH 200V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-PAK 0 2000 N-Channel - 200V 13A (Tc) 235 mOhm @ 8A, 10V 5.5V @ 250µA 38nC @ 10V 830pF @ 25V 10V ±30V 110W (Tc)
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