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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 54A TO-220AB TO-220-3 FETKY™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 30V 54A (Tc) 14 mOhm @ 32A, 10V 1V @ 250µA 44nC @ 4.5V 2300pF @ 25V 4.5V, 10V ±16V 2W (Ta), 70W (Tc)
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Infineon Technologies MOSFET N-CH 30V 54A TO-220AB TO-220-3 FETKY™ Tube MOSFET (Metal Oxide) Through Hole - Obsolete TO-220AB 0 50 N-Channel - 30V 54A (Tc) 14 mOhm @ 32A, 10V 1V @ 250µA 44nC @ 4.5V 2300pF @ 25V 4.5V, 10V ±16V 2W (Ta), 70W (Tc)
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$2.490
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STMicroelectronics MOSFET N-CH 100V 40A TO-220 TO-220-3 STripFET™ Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Active TO-220AB 0 1 N-Channel - 100V 40A (Tc) 33 mOhm @ 20A, 10V 2.5V @ 250µA 64nC @ 5V 2300pF @ 25V 5V, 10V ±17V 150W (Tc)
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