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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$6.620
RFQ
874
In-stock
STMicroelectronics MOSFET N-CH 500V 18A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAK 0 1 N-Channel - 500V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 65nC @ 10V 1950pF @ 25V 10V ±25V 140W (Tc)
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Per Unit
$3.996
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RFQ
STMicroelectronics MOSFET N-CH 600V 20A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MDmesh™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active D2PAK 0 1000 N-Channel - 600V 20A (Tc) 165 mOhm @ 10A, 10V 4V @ 250µA 60nC @ 10V 1800pF @ 50V 10V ±30V 140W (Tc)
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Per Unit
$8.100
RFQ
600
In-stock
STMicroelectronics MOSFET N-CH 600V 20A TO-247 TO-247-3 MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247-3 0 1 N-Channel - 600V 20A (Tc) 165 mOhm @ 10A, 10V 4V @ 250µA 60nC @ 10V 1800pF @ 50V 10V ±30V 140W (Tc)
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