- Package / Case :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | PG-TO220-3-1 | 0 | 0 | N-Channel | - | 55V | 80A (Tc) | 5.5 mOhm @ 80A, 10V | 4V @ 230µA | 155nC @ 10V | 4400pF @ 25V | 10V | ±20V | 300W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 55V | 80A (Tc) | 5.5 mOhm @ 80A, 10V | 4V @ 230µA | 155nC @ 10V | 4400pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 75V 80A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 80V | 80A (Tc) | 5.5 mOhm @ 80A, 10V | 4V @ 90µA | 70nC @ 10V | 4800pF @ 25V | 10V | ±20V | 150W (Tc) |
