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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 650V 8.7A TO263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D²PAK (TO-263AB) 0 1000 N-Channel - 650V 8.7A (Tc) 420 mOhm @ 3.4A, 10V 4.5V @ 340µA 32nC @ 10V 870pF @ 100V 10V ±20V 83.3W (Tc)
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Per Unit
$2.193
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Infineon Technologies MOSFET N-CH 650V 8.7A TO247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 240 N-Channel - 650V 8.7A (Tc) 420 mOhm @ 3.4A, 10V 4.5V @ 340µA 32nC @ 10V 870pF @ 100V 10V ±20V 83.3W (Tc)
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Per Unit
$1.201
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Infineon Technologies MOSFET N-CH 650V 8.7A TO220 TO-220-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-3 0 500 N-Channel - 650V 8.7A (Tc) 420 mOhm @ 3.4A, 10V 4.5V @ 340µA 32nC @ 10V 870pF @ 100V 10V ±20V 83.3W (Tc)
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Per Unit
$1.201
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Infineon Technologies MOSFET N-CH 650V 8.7A TO220 TO-220-3 Full Pack CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 500 N-Channel - 650V 8.7A (Tc) 420 mOhm @ 3.4A, 10V 4.5V @ 340µA 32nC @ 10V 870pF @ 100V 10V ±20V 31.2W (Tc)
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