- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 80V 55A DIRECTFET-MZ | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MZ | 0 | 1000 | N-Channel | - | 80V | 55A (Tc) | 15 mOhm @ 12A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1320pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 9.3A PQFN56 | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 100V | 9.3A (Ta), 46A (Tc) | 18 mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1510pF @ 50V | 10V | ±20V | 3.1W (Ta), 8.3W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 18A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 450 | N-Channel | - | 200V | 18A (Tc) | 105 mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | 10V | ±20V | 100W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 450 | N-Channel | - | 200V | 18A (Tc) | 105 mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | 10V | ±20V | 100W (Tc) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MZ | 0 | 1000 | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | 3.6W (Ta), 89W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | N-Channel | - | 80V | 10A (Ta) | 13.4 mOhm @ 10A, 10V | 4.9V @ 100µA | 41nC @ 10V | 1620pF @ 25V | 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 55A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MZ | 0 | 1000 | N-Channel | - | 80V | 55A (Tc) | 15 mOhm @ 12A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1320pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MZ | 0 | 1000 | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 200V | 18A (Tc) | 105 mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | 10V | ±20V | 100W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | 2.5W (Ta) | ||||
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664
In-stock
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Infineon Technologies | MOSFET N-CH 60V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 60V | 12A (Ta) | 9.4 mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1560pF @ 25V | 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 13.4A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MZ | 0 | 4800 | N-Channel | - | 60V | 13.4A (Ta), 67A (Tc) | 11 mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1350pF @ 25V | 10V | ±20V | 3.6W (Ta), 89W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MZ | 0 | 4800 | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 80V | 10A (Ta) | 13.4 mOhm @ 10A, 10V | 4.9V @ 100µA | 41nC @ 10V | 1620pF @ 25V | 10V | ±20V | 2.5W (Ta) | ||||
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4,000
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9.3A PQFN56 | 8-PowerVDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PQFN (5x6) Single Die | 0 | 4000 | N-Channel | - | 100V | 9.3A (Ta), 46A (Tc) | 18 mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | 1510pF @ 50V | 10V | ±20V | 3.1W (Ta), 8.3W (Tc) | ||||
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4,000
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 60V | 12A (Ta) | 9.4 mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1560pF @ 25V | 10V | ±20V | 2.5W (Ta) | ||||
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4,800
In-stock
|
Infineon Technologies | MOSFET N-CH 80V 55A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MZ | 0 | 4800 | N-Channel | - | 80V | 55A (Tc) | 15 mOhm @ 12A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1320pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) |