- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 75V 14A 8PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 75V | 14A (Ta), 75A (Tc) | 8.5 mOhm @ 45A, 10V | 4V @ 100µA | 72nC @ 10V | 3110pF @ 25V | 10V | ±20V | 3.6W (Ta), 104W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 100V | 11A (Ta), 63A (Tc) | 12.4 mOhm @ 37A, 10V | 4V @ 100µA | 72nC @ 10V | 3152pF @ 25V | 10V | ±20V | 3.6W (Ta), 114W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 3.8W (Ta), 107W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 3.8W (Ta), 107W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 53A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 300 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 3.8W (Ta), 107W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 3.8W (Ta), 107W (Tc) | |||
|
|
|
518
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 24A TO-247 | TO-247-3 | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-247-3 | 0 | 1 | N-Channel | - | 650V | 24A (Tc) | 119 mOhm @ 12A, 10V | 5V @ 250µA | 72nC @ 10V | 3320pF @ 100V | 10V | ±25V | 150W (Tc) | |||
|
|
|
374
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 24A TO-220 | TO-220-3 | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-220AB | 0 | 1 | N-Channel | - | 650V | 24A (Tc) | 119 mOhm @ 12A, 10V | 5V @ 250µA | 72nC @ 10V | 3320pF @ 100V | 10V | ±25V | 150W (Tc) |
