MOSFET - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Package / Case	Series	Packaging	Technology	Mounting Type	Operating Temperature	Part Status	Supplier Device Package	Factory Stock	Minimum Quantity	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)
	IRFL4315		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 150V 2.6A SOT223	TO-261-4, TO-261AA	HEXFET®	Tube	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 150°C (TJ)	Obsolete	SOT-223	0	2560	N-Channel	-	150V	2.6A (Ta)	185 mOhm @ 1.6A, 10V	5V @ 250µA	19nC @ 10V	420pF @ 25V	10V	±30V	2.8W (Ta)
	IRFR2605		GET PRICE VIEW	PDF RFQ		Infineon Technologies	MOSFET N-CH 55V 19A D-PAK	TO-252-3, DPak (2 Leads + Tab), SC-63	HEXFET®	Tube	MOSFET (Metal Oxide)	Surface Mount	-	Obsolete	D-PAK	0	75	N-Channel	-	55V	19A (Tc)	85 mOhm @ 11A, 10V	4V @ 250µA	23nC @ 10V	420pF @ 25V	10V	±20V	50W (Tc)
	IRFL4315PBF	Per Unit $1.150		PDF RFQ	1,476 In-stock	Infineon Technologies	MOSFET N-CH 150V 2.6A SOT223	TO-261-4, TO-261AA	HEXFET®	Tube	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 150°C (TJ)		SOT-223	0	1	N-Channel	-	150V	2.6A (Ta)	185 mOhm @ 1.6A, 10V	5V @ 250µA	19nC @ 10V	420pF @ 25V	10V	±30V	2.8W (Ta)
	IRFL4315TRPBF	Per Unit $0.359		PDF RFQ	5,000 In-stock	Infineon Technologies	MOSFET N-CH 150V 2.6A SOT223	TO-261-4, TO-261AA	HEXFET®	Tape & Reel (TR)	MOSFET (Metal Oxide)	Surface Mount	-55°C ~ 150°C (TJ)	Active	SOT-223	0	2500	N-Channel	-	150V	2.6A (Ta)	185 mOhm @ 1.6A, 10V	5V @ 250µA	19nC @ 10V	420pF @ 25V	10V	±30V	2.8W (Ta)

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