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- Package / Case :
- Series :
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- Part Status :
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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 174A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 20V | 174A (Tc) | 4 mOhm @ 104A, 10V | 4V @ 250µA | 120nC @ 10V | 3600pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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4,339
In-stock
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onsemi | MOSFET P-CH 60V 30A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220F | 0 | 1 | P-Channel | - | 60V | 30A (Tc) | 26 mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | 10V | ±25V | 62W (Tc) | |||
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3,261
In-stock
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onsemi | MOSFET P-CH 60V 47A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | P-Channel | - | 60V | 47A (Tc) | 26 mOhm @ 23.5A, 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | 10V | ±25V | 160W (Tc) |
