- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Power Dissipation (Max) :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 25µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 3000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 25µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 6000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 1500 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 2000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 75 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 75 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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26
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
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86,521
In-stock
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STMicroelectronics | MOSFET N-CH 500V 3A TO-220 | TO-220-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | TO-220AB | 0 | 2000 | N-Channel | - | 500V | 3A (Tc) | 2.7 Ohm @ 1.5A, 10V | 4.5V @ 50µA | 12nC @ 10V | 310pF @ 25V | 10V | ±30V | 45W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 500V 3A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SuperMESH™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | DPAK | 0 | 2500 | N-Channel | - | 500V | 3A (Tc) | 2.7 Ohm @ 1.5A, 10V | 4.5V @ 50µA | 12nC @ 10V | 310pF @ 25V | 10V | ±30V | 45W (Tc) | |||
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6,000
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) |
