Build a global manufacturer and supplier trusted trading platform.
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 40V 22A PQFN 8-VQFN Exposed Pad HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) 0 1 N-Channel - 40V 22A (Ta), 100A (Tc) 4.3 mOhm @ 50A, 10V 4V @ 100µA 65nC @ 10V 2460pF @ 25V 10V ±20V 3.6W (Ta), 105W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 40V 22A PQFN 8-VQFN Exposed Pad HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) 0 4000 N-Channel - 40V 22A (Ta), 100A (Tc) 4.3 mOhm @ 50A, 10V 4V @ 100µA 65nC @ 10V 2460pF @ 25V 10V ±20V 3.6W (Ta), 105W (Tc)
Page 1 / 1