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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 43A TO220AB TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 250 N-Channel - 100V 43A (Tc) 9.3 mOhm @ 26A, 10V 4V @ 150µA 110nC @ 10V 4910pF @ 50V 10V ±30V 47W (Tc)
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Infineon Technologies MOSFET N-CH 55V 17A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) PG-TO252-3 0 0 N-Channel - 55V 17A (Tc) 80 mOhm @ 7A, 10V 4V @ 14µA 10nC @ 10V 293pF @ 25V 10V ±20V 47W (Tc)
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Infineon Technologies MOSFET N-CH 60V 16A TO-252 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO252-3 0 2500 N-Channel - 60V 16A (Tc) 80 mOhm @ 16A, 10V 4V @ 16µA 10nC @ 10V 370pF @ 30V 10V ±20V 47W (Tc)
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$0.290
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Infineon Technologies MOSFET N-CH 55V 17A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO252-3-11 0 2500 N-Channel - 55V 17A (Tc) 80 mOhm @ 7A, 10V 4V @ 14µA 10nC @ 10V 293pF @ 25V 10V ±20V 47W (Tc)
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