- Package / Case :
- Supplier Device Package :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 3200 | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | 82W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 3000 | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | 82W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | 82W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 50 | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | 82W (Tc) |