- Manufacture :
- Packaging :
- Mounting Type :
- Part Status :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 550V 10A TO247-3 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO247-3 | 0 | 240 | N-Channel | - | 550V | 10A (Tc) | 350 mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25nC @ 10V | 1020pF @ 100V | 10V | ±20V | 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 1 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 550V 10A TO220-3 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 550V | 10A (Tc) | 350 mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25nC @ 10V | 1020pF @ 100V | 10V | ±20V | 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 18A TO247-3 | TO-247-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 650V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 72W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 650V 18A TO220 | TO-220-3 Full Pack | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220 Full Pack | 0 | 1 | N-Channel | - | 650V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 26W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 18A TO220-3 | TO-220-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-3 | 0 | 1 | N-Channel | - | 650V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 72W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 18A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ P7 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | - | 650V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 72W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ P7 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 600V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 72W (Tc) | |||
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229
In-stock
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Infineon Technologies | MOSFET N-CH 500V 10A TO220-3 | TO-220-3 Full Pack | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-FP | 0 | 1 | N-Channel | - | 500V | 10A (Tc) | 350 mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25nC @ 10V | 1020pF @ 100V | 10V | ±20V | 32W (Tc) | |||
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1,296
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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205
In-stock
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Infineon Technologies | MOSFET TO247-4 | TO-247-4 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-4 | 0 | 1 | N-Channel | - | 600V | 18A (Tc) | 180 mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | 1081pF @ 400V | 10V | ±20V | 72W (Tc) | |||
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2,400
In-stock
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onsemi | MOSFET N-CH 300V 14A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | UniFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK | 20800 | 800 | N-Channel | - | 300V | 14A (Tc) | 290 mOhm @ 7A, 10V | 5V @ 250µA | 25nC @ 10V | 1060pF @ 25V | 10V | ±30V | 140W (Tc) | |||
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67,500
In-stock
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onsemi | MOSFET P-CH 200V 5.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2500 | P-Channel | - | 200V | 5.7A (Tc) | 690 mOhm @ 2.85A, 10V | 5V @ 250µA | 25nC @ 10V | 770pF @ 25V | 10V | ±30V | 2.5W (Ta), 55W (Tc) | |||
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22,500
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) |
