- Manufacture :
- Package / Case :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 500V 12A TO-3-3 | TO-204AA, TO-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-204AA (TO-3) | 0 | 100 | N-Channel | - | 500V | 12A (Tc) | 500 mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | 2700pF @ 25V | 10V | ±20V | 150W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 650V 60A | TO-247-3 | Automotive, AEC-Q101, MDmesh™ DM2 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 650V | 60A (Tc) | 50 mOhm @ 30A, 10V | 5V @ 250µA | 120nC @ 10V | 5500pF @ 100V | 10V | ±25V | 446W (Tc) |
