- Manufacture :
- Series :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 55V 74A TO-262 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1000 | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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In-stock
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STMicroelectronics | MOSFET N-CH 900V 9.2A TO-247 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 900V | 9.2A (Tc) | 980 mOhm @ 4.6A, 10V | 4.5V @ 100µA | 115nC @ 10V | 3000pF @ 25V | 10V | ±30V | 200W (Tc) |
