- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 75A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Last Time Buy | TO-220AB | 0 | 1000 | N-Channel | - | 55V | 75A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | 330W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 75V 75A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Last Time Buy | TO-220AB | 0 | 1000 | N-Channel | - | 75V | 75A (Tc) | 13 mOhm @ 43A, 10V | 4V @ 250µA | 160nC @ 10V | 3820pF @ 25V | 10V | ±20V | 230W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 75V 80A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Last Time Buy | TO-220AB | 0 | 1000 | N-Channel | - | 75V | 75A (Tc) | 12.6 mOhm @ 48A, 10V | 4V @ 250µA | 130nC @ 10V | 3270pF @ 25V | 10V | ±20V | 200W (Tc) |
