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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 13A WDSON-2 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 60V 13A (Ta), 56A (Tc) 7.7 mOhm @ 30A, 10V 4V @ 33µA 46nC @ 10V 3700pF @ 30V 10V ±20V 2.2W (Ta), 38W (Tc)
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Infineon Technologies MOSFET N-CH 120V 37A 8TDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TDSON-8 0 5000 N-Channel - 120V 37A (Tc) 24 mOhm @ 31A, 10V 4V @ 35µA 27nC @ 10V 1900pF @ 60V 10V ±20V 66W (Tc)
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Infineon Technologies MOSFET P-CH 30V 12.5A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TDSON-8 0 5000 P-Channel - 30V 9.9A (Ta), 12.5A (Tc) 20 mOhm @ 12.5A, 10V 2.2V @ 100µA 48.5nC @ 10V 2430pF @ 15V 10V ±25V 2.5W (Ta), 63W (Tc)
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Infineon Technologies MOSFET N-CH 100V 63A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TDSON-8 0 5000 N-Channel - 100V 9.4A (Ta), 63A (Tc) 15.2 mOhm @ 25A, 10V 4V @ 72µA 29nC @ 10V 1900pF @ 50V 10V ±20V 114W (Tc)
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