- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 100 mOhm @ 10A, 10V (1)
- 110 mOhm @ 9.6A, 10V (2)
- 117 mOhm @ 13A, 10V (1)
- 14 Ohm @ 200mA, 10V (2)
- 150 mOhm @ 16A, 10V (1)
- 160 mOhm @ 5A, 10V (1)
- 175 mOhm @ 6.6A, 10V (1)
- 175 mOhm @ 7.2A, 10V (1)
- 20 mOhm @ 38A, 10V (1)
- 20 mOhm @ 42A, 10V (2)
- 20 Ohm @ 150mA, 10V (1)
- 200 mOhm @ 5A, 10V (1)
- 200 mOhm @ 8.4A, 10V (2)
- 205 mOhm @ 7.8A, 10V (2)
- 26 mOhm @ 15A, 10V (1)
- 26 mOhm @ 23.5A, 10V (1)
- 290 mOhm @ 6.6A, 10V (1)
- 295 mOhm @ 6.6A, 10V (2)
- 4.9 Ohm @ 1.35A, 10V (1)
- 480 mOhm @ 3.9A, 10V (1)
- 60 mOhm @ 16A, 10V (1)
- 60 mOhm @ 24A, 10V (1)
- 60 mOhm @ 38A, 10V (1)
- 65 mOhm @ 16A, 10V (3)
- 8 Ohm @ 375mA, 10V (1)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 100pF @ 25V (1)
- 1200pF @ 25V (4)
- 1300pF @ 25V (1)
- 2210pF @ 25V (1)
- 2700pF @ 25V (1)
- 2780pF @ 25V (1)
- 3400pF @ 25V (1)
- 340pF @ 48V (1)
- 3500pF @ 25V (2)
- 350pF @ 25V (3)
- 3600pF @ 25V (2)
- 50pF @ 18V (1)
- 50pF @ 25V (1)
- 60pF @ 10V (1)
- 620pF @ 25V (1)
- 650pF @ 25V (2)
- 660pF @ 25V (1)
- 760pF @ 25V (4)
- 850pF @ 25V (1)
- 860pF @ 25V (3)
- Power Dissipation (Max) :
-
- 110W (Tc) (6)
- 140W (Tc) (1)
- 160W (Tc) (1)
- 170W (Tc) (2)
- 200W (Tc) (2)
- 250W (Tc) (1)
- 3.1W (Ta), 170W (Tc) (1)
- 3.8W (Ta), 110W (Tc) (1)
- 3.8W (Ta), 45W (Tc) (1)
- 3.8W (Ta), 79W (Tc) (1)
- 30W (Tc) (1)
- 38W (Tc) (1)
- 40W (Tc) (2)
- 57W (Tc) (2)
- 625mW (Ta) (2)
- 62W (Tc) (1)
- 66W (Tc) (2)
- 68W (Tc) (1)
- 700mW (Ta) (2)
- 79W (Tc) (1)
- 85W (Tc) (1)
33 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | P-Channel | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 45W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 1 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 55V 31A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | P-Channel | 55V | 31A (Tc) | 65 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | P-Channel | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 3.8W (Ta), 79W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET P-CH 55V 74A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | 55V | 74A (Tc) | 20 mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | 3400pF @ 25V | 10V | ±20V | 200W (Tc) | |||
|
|
|
192
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 31A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | P-Channel | 55V | 31A (Tc) | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | 3.8W (Ta), 110W (Tc) | ||||
|
|
|
121
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 1 | P-Channel | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 40W (Tc) | ||||
|
|
|
681
In-stock
|
STMicroelectronics | MOSFET P-CH 60V 10A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Obsolete | I-PAK | 0 | 1 | P-Channel | 60V | 10A (Tc) | 200 mOhm @ 5A, 10V | 4V @ 250µA | 21nC @ 10V | 850pF @ 25V | 10V | ±20V | 40W (Tc) | |||
|
|
|
23
In-stock
|
STMicroelectronics | MOSFET P CH 60V 10A TO-220 | TO-220-3 | DeepGATE™, STripFET™ VI | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-220 | 0 | 1 | P-Channel | 60V | 10A (Tc) | 160 mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | 10V | ±20V | 30W (Tc) | |||
|
|
9,830
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 19A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | 68W (Tc) | |||
|
|
|
11,348
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 42A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D2PAK | 0 | 1 | P-Channel | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 170W (Tc) | ||||
|
|
|
4,950
In-stock
|
Infineon Technologies | MOSFET P-CH 150V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | P-Channel | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
|
|
|
4,094
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 18A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D-PAK | 0 | 1 | P-Channel | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | ||||
|
|
|
1,674
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 13A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | D-PAK | 0 | 1 | P-Channel | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
|
|
|
1,100
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) | |||
|
|
|
9,497
In-stock
|
Infineon Technologies | MOSFET P-CH 150V 13A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | P-Channel | 150V | 13A (Tc) | 295 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
|
|
|
1,522
In-stock
|
Infineon Technologies | MOSFET P-CH 150V 27A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | 150V | 27A (Tc) | 150 mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | 2210pF @ 25V | 10V | ±20V | 250W (Tc) | |||
|
|
|
3,148
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 42A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 170W (Tc) | |||
|
|
|
1,219
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 23A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | P-Channel | 100V | 23A (Tc) | 117 mOhm @ 13A, 10V | 4V @ 250µA | 97nC @ 10V | 1300pF @ 25V | 10V | ±20V | 140W (Tc) | |||
|
|
|
2,900
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 31A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 1 | P-Channel | 55V | 31A (Tc) | 65 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | 110W (Tc) | |||
|
|
|
1,288
In-stock
|
Infineon Technologies | MOSFET P-CH 150V 13A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | 150V | 13A (Tc) | 290 mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | 10V | ±20V | 110W (Tc) | |||
|
|
|
21,385
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 31A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | P-Channel | 55V | 31A (Tc) | 65 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | 110W (Tc) | |||
|
|
|
1,294
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 14A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | P-Channel | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 79W (Tc) | |||
|
|
|
6,336
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 18A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | P-Channel | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | 57W (Tc) | |||
|
|
50,440
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | P-Channel | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 38W (Tc) | |||
|
|
|
7,229
In-stock
|
Diodes Incorporated | MOSFET P-CH 100V 0.23A TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 24000 | 1 | P-Channel | 100V | 230mA (Ta) | 8 Ohm @ 375mA, 10V | 3.5V @ 1mA | - | 100pF @ 25V | 10V | ±20V | 700mW (Ta) | |||
|
|
|
4,722
In-stock
|
Diodes Incorporated | MOSFET P-CH 100V 0.14A TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 4000 | 1 | P-Channel | 100V | 140mA (Ta) | 20 Ohm @ 150mA, 10V | 3.5V @ 1mA | - | 50pF @ 25V | 10V | ±20V | 625mW (Ta) | |||
|
|
|
5,842
In-stock
|
Diodes Incorporated | MOSFET P-CH 60V 160MA TO92-3 | TO-226-3, TO-92-3 (TO-226AA) | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 1 | P-Channel | 60V | 160mA (Ta) | 14 Ohm @ 200mA, 10V | 3.5V @ 1mA | - | 50pF @ 18V | 10V | ±20V | 625mW (Ta) | |||
|
|
|
4,339
In-stock
|
onsemi | MOSFET P-CH 60V 30A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220F | 0 | 1 | P-Channel | 60V | 30A (Tc) | 26 mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | 10V | ±25V | 62W (Tc) | |||
|
|
|
3,261
In-stock
|
onsemi | MOSFET P-CH 60V 47A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | P-Channel | 60V | 47A (Tc) | 26 mOhm @ 23.5A, 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | 10V | ±25V | 160W (Tc) |
