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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.151
RFQ
6,000
In-stock
Diodes Incorporated MOSFET N-CH 30V 2A SOT23-3 TO-236-3, SC-59, SOT-23-3 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23-3 24000 0 3000 N-Channel - 30V 2A (Ta) 150 mOhm @ 4.5A, 4.5V 1V @ 250µA - 193pF @ 10V 1.5V, 4.5V ±12V 700mW (Ta)
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Per Unit
$0.200
RFQ
9,000
In-stock
Diodes Incorporated MOSFET N-CH 20V 2A SOT23-3 TO-236-3, SC-59, SOT-23-3 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23-3 111000 0 3000 N-Channel - 20V 2A (Ta) 110 mOhm @ 2.5A, 4.5V 1V @ 250µA - 188pF @ 10V 1.8V, 4.5V ±12V 600mW (Ta)
Default Photo
Per Unit
$0.139
RFQ
6,000
In-stock
Diodes Incorporated MOSFET N-CH 20V 2A SOT23 TO-236-3, SC-59, SOT-23-3 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23 0 0 3000 N-Channel - 20V 2A (Ta) 110 mOhm @ 2.5A, 4.5V 1V @ 250µA 2.3nC @ 10V 188pF @ 10V 1.8V, 4.5V ±12V 600mW (Ta)
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Per Unit
$0.186
RFQ
45,000
In-stock
onsemi MOSFET P-CH 20V 2A SSOT-3 TO-236-3, SC-59, SOT-23-3 PowerTrench® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SuperSOT-3 525000 0 3000 P-Channel - 20V 2A (Ta) 80 mOhm @ 2A, 4.5V 1.5V @ 250µA 9nC @ 4.5V 635pF @ 10V 2.5V, 4.5V ±12V 500mW (Ta)
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