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Supplier Device Package :
Minimum Quantity :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 20V 4.3A MICRO-8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 1300 P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 55 mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15nC @ 5V 1066pF @ 10V 2.5V, 4.5V ±12V 1.25W (Ta)
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Infineon Technologies MOSFET P-CH 20V 4.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 90 mOhm @ 2.2A, 4.5V 700mV @ 250µA 22nC @ 4.5V 610pF @ 15V 2.7V, 4.5V ±12V 2W (Ta)
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Infineon Technologies MOSFET P-CH 20V 4.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 90 mOhm @ 2.2A, 4.5V 700mV @ 250µA 22nC @ 4.5V 610pF @ 15V 2.7V, 4.5V ±12V 2W (Ta)
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Infineon Technologies MOSFET P-CH 20V 4.3A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) FETKY™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 4000 P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 55 mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15nC @ 5V 1066pF @ 10V 2.5V, 4.5V ±12V 1.25W (Ta)
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VIEW
RFQ
Infineon Technologies MOSFET P-CH 20V 4.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 90 mOhm @ 2.2A, 4.5V 700mV @ 250µA 22nC @ 4.5V 610pF @ 15V 2.7V, 4.5V ±12V 2W (Ta)
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VIEW
RFQ
Infineon Technologies MOSFET P-CH 20V 4.3A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 95 P-Channel Schottky Diode (Isolated) 20V 4.3A (Ta) 55 mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15nC @ 5V 1066pF @ 10V 2.5V, 4.5V ±12V 1.25W (Ta)
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