- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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GET PRICE |
14,500
In-stock
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Infineon Technologies | MOSFET P-CH 20V 780MA SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro3™/SOT-23 | 0 | 1 | P-Channel | - | 20V | 780mA (Ta) | 600 mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6nC @ 4.45V | 97pF @ 15V | 2.7V, 4.5V | ±12V | 540mW (Ta) | ||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 1.2A SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro3™/SOT-23 | 0 | 1 | N-Channel | - | 20V | 1.2A (Ta) | 250 mOhm @ 930mA, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | 2.7V, 4.5V | ±12V | 540mW (Ta) |
