- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.7A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | N-Channel | 30V | 8.7A (Ta), 19A (Tc) | 15.5 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1019pF @ 25V | 2.5V, 4.5V | ±12V | 2.1W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (3x3) | 0 | 1 | N-Channel | 30V | 21A (Ta), 40A (Tc) | 3.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | 2.5V, 10V | ±12V | 2.7W (Ta), 37W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 13A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N-Channel | 30V | 13A (Ta) | 11 mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | - | 4.5V | ±12V | 2.5W (Ta) |