- Package / Case :
- Packaging :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | 4.5V, 10V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 14A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 30V | 14A (Ta) | 8 mOhm @ 14A, 10V | 2V @ 250µA | 51nC @ 4.5V | 3150pF @ 15V | 2.7V, 10V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 15A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 30V | 15A (Ta) | 7.5 mOhm @ 15A, 10V | 2V @ 250µA | 56nC @ 5V | 3480pF @ 25V | 2.8V, 10V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | P-Channel | - | 20V | 5.3A (Ta) | 60 mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | 4.5V, 10V | ±12V | 2.5W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 4.2A SOT-23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Micro3™/SOT-23 | 0 | 1 | N-Channel | - | 20V | 4.2A (Ta) | 45 mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12nC @ 5V | 740pF @ 15V | 2.7V, 4.5V | ±12V | 1.25W (Ta) |
