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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 77A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 3000 N-Channel - 20V 77A (Tc) 8.5 mOhm @ 15A, 10V 2V @ 250µA 35nC @ 4.5V 2410pF @ 10V 2.8V, 10V ±12V 88W (Tc)
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Infineon Technologies MOSFET N-CH 30V 62A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 350 N-Channel - 30V 62A (Tc) 12 mOhm @ 15A, 10V 2V @ 250µA 24nC @ 4.5V 2417pF @ 15V 2.8V, 10V ±12V 87W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 20V 77A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 50 N-Channel - 20V 77A (Tc) 8.5 mOhm @ 15A, 10V 2V @ 250µA 35nC @ 4.5V 2410pF @ 10V 2.8V, 10V ±12V 88W (Tc)
IRF3708PBF
Per Unit
$1.770
RFQ
187,760
In-stock
Infineon Technologies MOSFET N-CH 30V 62A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 30V 62A (Tc) 12 mOhm @ 15A, 10V 2V @ 250µA 24nC @ 4.5V 2417pF @ 15V 2.8V, 10V ±12V 87W (Tc)
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