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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 20V 28A PQFN 5X6 MM | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | 3.6W (Ta), 52W (Tc) | |||
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VIEW | Texas instruments | MOSFET P-CH 20V 60A 8-SON | 8-PowerTDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-VSON-CLIP (3.3x3.3) | 0 | 2500 | P-Channel | - | 20V | 14A (Ta), 60A (Tc) | 11.7 mOhm @ 10A, 4.5V | 1.2V @ 250µA | 12.3nC @ 4.5V | 1400pF @ 10V | 2.5V, 4.5V | ±12V | 2.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 20V | 30A (Ta), 100A (Tc) | 1.95 mOhm @ 50A, 4.5V | 1.2V @ 350µA | 85nC @ 4.5V | 13000pF @ 10V | 2.5V, 4.5V | ±12V | 2.8W (Ta), 104W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 20V | 25A (Ta), 100A (Tc) | 2.6 mOhm @ 50A, 4.5V | 1.2V @ 200µA | 52.7nC @ 4.5V | 7800pF @ 10V | 2.5V, 4.5V | ±12V | 2.8W (Ta), 78W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 80A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 20V | 19A (Ta), 80A (Tc) | 4.6 mOhm @ 50A, 4.5V | 1.2V @ 110µA | 27.6nC @ 4.5V | 4100pF @ 10V | 2.5V, 4.5V | ±12V | 2.8W (Ta), 48W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 28A PQFN 5X6 | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (5x6) | 0 | 4000 | N-Channel | - | 20V | 28A (Ta), 105A (Tc) | 3 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | 3710pF @ 10V | 2.5V, 4.5V | ±12V | 3.6W (Ta), 52W (Tc) | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET P-CH 20V POWERDI5060-8 | 8-PowerTDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | POWERDI5060-8 | 217500 | 2500 | P-Channel | - | 20V | 60A (Tc) | 1.9 mOhm @ 25A, 10V | 1.4V @ 250µA | 585nC @ 10V | 12826pF @ 10V | 2.5V, 10V | ±12V | 2.3W (Ta) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 20V 26A PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PQFN (3x3) | 0 | 4000 | N-Channel | - | 20V | 26A (Ta), 40A (Tc) | 2.5 mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | 3620pF @ 10V | 2.5V, 10V | ±12V | 2.7W (Ta), 37W (Tc) | |||
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3,000
In-stock
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onsemi | MOSFET N-CH 30V 15A POWER33 | 8-PowerTDFN | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Power33 | 0 | 3000 | N-Channel | - | 30V | 15A (Ta), 20A (Tc) | 6.1 mOhm @ 15A, 4.5V | 1.5V @ 250µA | 27.2nC @ 4.5V | 3365pF @ 15V | 2.5V, 4.5V | ±12V | 2.3W (Ta), 41W (Tc) |
