- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 20V | 30A (Ta), 100A (Tc) | 1.95 mOhm @ 50A, 4.5V | 1.2V @ 350µA | 85nC @ 4.5V | 13000pF @ 10V | 2.5V, 4.5V | ±12V | 2.8W (Ta), 104W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 100A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 20V | 25A (Ta), 100A (Tc) | 2.6 mOhm @ 50A, 4.5V | 1.2V @ 200µA | 52.7nC @ 4.5V | 7800pF @ 10V | 2.5V, 4.5V | ±12V | 2.8W (Ta), 78W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 80A TDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 20V | 19A (Ta), 80A (Tc) | 4.6 mOhm @ 50A, 4.5V | 1.2V @ 110µA | 27.6nC @ 4.5V | 4100pF @ 10V | 2.5V, 4.5V | ±12V | 2.8W (Ta), 48W (Tc) |