- Package / Case :
- Packaging :
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- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
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- Input Capacitance (Ciss) (Max) @ Vds :
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2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 30V 2.3A 6-TSOP | SOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(SOT23-6) | 0 | 1 | P-Channel | - | 30V | 2.3A (Ta) | 200 mOhm @ 1.6A, 10V | 1V @ 250µA | 11nC @ 10V | 170pF @ 25V | 4.5V, 10V | ±20V | 1.7W (Ta) | ||||
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Infineon Technologies | MOSFET P-CH 30V 2.3A SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | 0 | 3000 | P-Channel | - | 30V | 2.3A (Ta) | 165 mOhm @ 2.3A, 10V | 2.4V @ 10µA | 2nC @ 4.5V | 160pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) |