- Packaging :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 200V 3.8A PQFN | 8-VQFN Exposed Pad | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) | 0 | 1 | N-Channel | - | 200V | 3.8A (Ta), 20A (Tc) | 99.9 mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | 1380pF @ 50V | 10V | ±20V | 3.6W (Ta), 8.3W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 3.8A PQFN | 8-VQFN Exposed Pad | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) | 0 | 4000 | N-Channel | - | 200V | 3.8A (Ta), 20A (Tc) | 99.9 mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | 1380pF @ 50V | 10V | ±20V | 3.6W (Ta), 8.3W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1000 | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | 71W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 43A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 900 | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | 71W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 28A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 3000 | N-Channel | - | 60V | 28A (Tc) | 42 mOhm @ 17A, 10V | 4V @ 250µA | 30nC @ 10V | 680pF @ 25V | 10V | ±20V | 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 28A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 50 | N-Channel | - | 60V | 28A (Tc) | 42 mOhm @ 17A, 10V | 4V @ 250µA | 30nC @ 10V | 680pF @ 25V | 10V | ±20V | 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | 71W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 43A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK (TO-252AA) | 0 | 3000 | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | 71W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 3.6A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 4000 | P-Channel | - | 30V | 3.6A (Ta) | 90 mOhm @ 2.4A, 10V | 1V @ 250µA | 30nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 3.6A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro8™ | 0 | 4000 | P-Channel | - | 30V | 3.6A (Ta) | 90 mOhm @ 2.4A, 10V | 1V @ 250µA | 30nC @ 10V | 520pF @ 25V | 4.5V, 10V | ±20V | 1.8W (Ta) | |||
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10,532
In-stock
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Infineon Technologies | MOSFET N-CH 60V 43A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | 71W (Tc) | |||
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3,860
In-stock
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Infineon Technologies | MOSFET N-CH 60V 43A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | 71W (Tc) | |||
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2,400
In-stock
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Infineon Technologies | MOSFET N-CH 60V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | 71W (Tc) |
