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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 25V 9.9A PQFN 6-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-PQFN (2x2) 0 1 N-Channel - 25V 9.9A (Ta), 21A (Tc) 13 mOhm @ 8.5A, 10V 2.35V @ 25µA 10.4nC @ 10V 653pF @ 10V 4.5V, 10V ±20V 2.1W (Ta)
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Infineon Technologies MOSFET P-CH 30V 6A PQFN 6-PowerVDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-PQFN (2x2) 0 1 P-Channel - 30V 6A (Ta), 13A (Tc) 37 mOhm @ 7.8A, 10V 2.4V @ 25µA 13nC @ 10V 580pF @ 25V 4.5V, 10V ±20V 2.1W (Ta)
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Per Unit
$0.192
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RFQ
Infineon Technologies MOSFET N-CH 25V 9.9A PQFN 6-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-PQFN (2x2) 0 4000 N-Channel - 25V 9.9A (Ta), 21A (Tc) 13 mOhm @ 8.5A, 10V 2.35V @ 25µA 10.4nC @ 10V 653pF @ 10V 4.5V, 10V ±20V 2.1W (Ta)
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Per Unit
$0.268
RFQ
8,000
In-stock
Infineon Technologies MOSFET P-CH 30V 6A PQFN 6-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-PQFN (2x2) 0 4000 P-Channel - 30V 6A (Ta), 13A (Tc) 37 mOhm @ 7.8A, 10V 2.4V @ 25µA 13nC @ 10V 580pF @ 25V 4.5V, 10V ±20V 2.1W (Ta)
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