- Mounting Type :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 75A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 650 | N-Channel | - | 40V | 75A (Tc) | 5.5 mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | 3000pF @ 25V | 10V | ±20V | 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 31A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 650 | P-Channel | - | 55V | 31A (Tc) | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | 3.8W (Ta), 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 36A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 650 | N-Channel | - | 20V | 36A (Tc) | 16 mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2nC @ 4.5V | 550pF @ 10V | 4.5V, 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 50A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 650 | N-Channel | - | 20V | 50A (Tc) | 11 mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 870pF @ 10V | 4.5V, 10V | ±20V | 45W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 50A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 650 | N-Channel | - | 20V | 50A (Tc) | 11 mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 870pF @ 10V | 4.5V, 10V | ±20V | 45W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 48A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 650 | N-Channel | - | 60V | 48A (Tc) | 23 mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 29A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 650 | N-Channel | - | 55V | 29A (Tc) | 40 mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | 3.8W (Ta), 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 36A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 650 | N-Channel | - | 20V | 36A (Tc) | 20 mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | 670pF @ 10V | 4.5V, 10V | ±20V | 47W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 50A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 650 | N-Channel | - | 20V | 50A (Tc) | 11 mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 870pF @ 10V | 4.5V, 10V | ±20V | 45W (Tc) |
