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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 150V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 525 P-Channel - 150V 13A (Tc) 295 mOhm @ 6.6A, 10V 4V @ 250µA 66nC @ 10V 860pF @ 25V 10V ±20V 110W (Tc)
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Infineon Technologies MOSFET P-CH 55V 18A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) D-PAK 0 525 P-Channel - 55V 18A (Tc) 110 mOhm @ 9.6A, 10V 4V @ 250µA 32nC @ 10V 650pF @ 25V 10V ±20V 57W (Tc)
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Infineon Technologies MOSFET N-CH 55V 20A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 525 N-Channel - 55V 20A (Tc) 45 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V 68W (Tc)
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Infineon Technologies MOSFET N-CH 40V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 525 N-Channel - 40V 42A (Tc) 9 mOhm @ 42A, 10V 4V @ 250µA 45nC @ 10V 1510pF @ 25V 10V ±20V 90W (Tc)
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Infineon Technologies MOSFET N-CH 200V 24A IPAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) 0 525 N-Channel - 200V 24A (Tc) 78 mOhm @ 15A, 10V 5V @ 100µA 38nC @ 10V 1710pF @ 50V 10V ±20V 144W (Tc)
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Infineon Technologies MOSFET N-CH 20V 120A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 525 N-Channel - 20V 120A (Tc) 4 mOhm @ 15A, 10V 2.45V @ 250µA 31nC @ 4.5V 2830pF @ 10V 4.5V, 10V ±20V 89W (Tc)
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Infineon Technologies MOSFET N-CH 20V 54A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 525 N-Channel - 20V 54A (Tc) 14 mOhm @ 26A, 10V 3V @ 250µA 17nC @ 4.5V 1060pF @ 10V 4.5V, 10V ±20V 3.8W (Ta), 71W (Tc)
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Infineon Technologies MOSFET N-CH 20V 36A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 525 N-Channel - 20V 36A (Tc) 20 mOhm @ 18A, 10V 3V @ 250µA 9.7nC @ 4.5V 670pF @ 10V 4.5V, 10V ±20V 47W (Tc)
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Infineon Technologies MOSFET P-CH 55V 18A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete IPAK (TO-251) 0 525 P-Channel - 55V 18A (Tc) 110 mOhm @ 9.6A, 10V 4V @ 250µA 32nC @ 10V 650pF @ 25V 10V ±20V 57W (Tc)
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Infineon Technologies MOSFET P-CH 55V 18A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D-PAK 0 525 P-Channel - 55V 18A (Tc) 110 mOhm @ 9.6A, 10V 4V @ 250µA 32nC @ 10V 650pF @ 25V 10V ±20V 57W (Tc)
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