- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 26A 8PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 26A (Ta), 85A (Tc) | 3.3 mOhm @ 50A, 10V | 2.5V @ 100µA | 58nC @ 4.5V | 3720pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 104W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 60V | 20A (Ta), 100A (Tc) | 4.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | 5360pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 160W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 100A 5X6 PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 29A (Ta), 100A (Tc) | 2.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 82nC @ 10V | 4730pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 156W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 13A 8PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PQFN (5x6) Single Die | 0 | 1 | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | 5185pF @ 50V | 4.5V, 10V | ±16V | 3.6W (Ta), 156W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 36A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 1 | N-Channel | - | 100V | 36A (Tc) | 44 mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 140W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | D2PAK | 0 | 1 | N-Channel | - | 55V | 75A (Tc) | 8 mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | 2880pF @ 25V | 4.5V, 10V | ±16V | 130W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | TO-261-4, TO-261AA | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 1 | N-Channel | - | 55V | 3.8A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | 1W (Ta) |
